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              例: SP1231F|SP1233FL|SW6124|SW6106|CS8626
              DW3402

              Part NO:DW3402

              封裝:SOT23

              工作電壓:耐壓30V

              簡介:28m? @10V, 34m? @4.5V , 電流 5.1A
            1. 30V/5.1A N Channel Advanced Power MOSFET 

              Features

              ? Low RDS(on) @VGS=10V

              ? 3.3V Logic Level Control

              ? N Channel SOT23 Package

              ? Pb?Free, RoHS Compliant


              V(BR)DSS

              RDS(ON) Typ

              ID Max


              30V

              28m? @10V


              5.1A

              34m? @4.5V



              Applications

              ? DC-to-DC converters

              ? Power management in battery-driven portables

              ? Low-side load switch and charging switch for portable devices

              ? Switching circuits

              ? High-speed line driver



              Order Information

              Product

              Package

              Marking

              Packing

              DW3402

              SOT23

              A29T

              3000PCS/Reel


              Absolute Maximum Ratings

              Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


              Symbol

              Parameter

              Rating

              Unit

              Common Ratings (TA=25°C Unless Otherwise Noted)

              VGS

              Gate-Source Voltage

              ±16

              V

              V(BR)DSS

              Drain-Source Breakdown Voltage

              30

              V

              TJ

              Maximum Junction Temperature

              150

              °C

              TSTG

              Storage Temperature Range

              -50 to 150

              °C

              Mounted on Large Heat Sink

              IDM

              Pulse Drain Current Tested①

              TA =25°C

              20.4

              A

               

              ID

               

              Continuous Drain Current

              TA =25°C

              5.1

               

              A

              TA =70°C

              4

               

              PD

               

              Maximum Power Dissipation

              TA =25°C

              1.5

               

              W

              TA =70°C

              0.9

              Rq JA

              Thermal Resistance Junction-Ambient

              80

              °C/W



              Symbol

              Parameter

              Condition

              Min

              Typ

              Max

              Unit

              Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

              V(BR)DSS

              Drain-Source Breakdown Voltage

              VGS=0V ID=250μA

              30

              --

              --

              V

               

              IDSS

               

              Zero Gate Voltage Drain Current(TA=25℃)

               

              VDS=30V, VGS=0V

               

              --

               

              --

               

              1

               

              μA

              Zero Gate Voltage Drain Current(TA=125℃)

              VDS=24V, VGS=0V

              --

              --

              100

              uA

              IGSS

              Gate-Body Leakage Current

              VGS=±16V, VDS=0V

              --

              --

              ±100

              nA

              VGS(TH)

              Gate Threshold Voltage

              VDS=VGS, ID=250μA

              0.5

              0.8

              1.2

              V

              RDS(ON)

              Drain-Source On-State Resistance②

              VGS=10V, ID=4A

              --

              28

              36

              m?

              RDS(ON)

              Drain-Source On-State Resistance②

               

              VGS=4.5V, ID=3A

               

              --

               

              34

               

              50

               

              m?

              RDS(ON)

              Drain-Source On-State Resistance②

               

              VGS=3.3V, ID=2A

               

              --

               

              40

               

              60

               

              m?

              RDS(ON)

              Drain-Source On-State Resistance②

               

              VGS=2.5V, ID=1A

               

              --

               

              55

               

              80

               

              m?

              Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

              Ciss

              Input Capacitance

               

               

              VDS=15V, VGS=0V,

              f=1MHz

              --

              240

              --

              pF

              Coss

              Output Capacitance

              --

              35

              --

              pF

              Crss

              Reverse Transfer Capacitance

              --

              30

              --

              pF

              Qg

              Total Gate Charge

               

              VDS=15V ID=4A, VGS=4.5V

              --

              3.1

              --

              nC

              Qgs

              Gate Source Charge

              --

              0.4

              --

              nC

              Qgd

              Gate Drain Charge

              --

              1.3

              --

              nC

              Switching Characteristics

              td(on)

              Turn on Delay Time

               

               

              VDD=15V, ID=1A, RG=3.3?, VGS=10V

              --

              4.4

              --

              ns

              tr

              Turn on Rise Time

              --

              2.6

              --

              ns

              td(off)

              Turn Off Delay Time

              -

              25.5

              --

              ns

              tf

              Turn Off Fall Time

              --

              3.3

              --

              ns

              Source Drain Diode Characteristics

              ISD

              Source drain current(Body Diode)

              TA=25℃

              --

              --

              1.8

              A

              VSD

               

              Forward on voltage②

              Tj=25℃, ISD=4A,

              VGS=0V

               

              --

               

              0.85

               

              1.2

               

              V



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